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| ! " #$ % $ ! ! & ! '() ! * ! % ! $ ! # ("++, * " ! -,! # ! ! * ("++, $ ! # ! " #$% &' !( ) * % # + , * # - %., #/ 01 23 - %. , 4 - - %. , #/ 23 -( 5 4% -/ -( & ( 6 #3 % 70 * #2 4 # * #2 8 % '9&:228 2%; < # =:' <'% >8? 9&@?2; 4 3 % aaa &0 4 * 5$ ) *8% & aaa (! 4 3 % 2> aaa : .)) .)/ 0 ? . to-220ab !" " # $ % ! $# $ :(( s d g * % <6*$,/2> 9b / ; aaa aaa . # . * % # - 9b / ; aaa aaa c % & $ # aaa aaa &: 4-4% -/ 2 aaa 0 : d 4-4% -/ .# aaa & &1 e ( (e $ 6 2 % 2 # # > 9 2 >/" 7" ; * % b5 # aaa aaa e ? ? b5 # 2 & 88 % aaa & aaa ( 48 % 2 4 * % * % 6 4 % aaa aaa &: ? ) .. # & aaa & e # $ % % % aaa aaa * aaa aaa e aaa aaa 1 ) * % $ "5# aaa aaa ) * % 4- "5# aaa aaa d ) .# aaa aaa 1 d ) * % .# aaa aaa 1 d ) 9f< f; .# aaa aaa 0 *$ #&: ' 6 / 2 aaa 0 aaa 4 2 aaa 1: aaa 688 / 2 aaa 0 aaa 4 & ? $ 2 aaa 1 aaa 4 & ?, *$ #& b aaa aaa :229& &; 8 2 %5# % 8 % % % % aaa 0 aaa 6 % % aaa 0 aaa $ 4- 8 % % aaa aaa g& % % % aaa aaa & 0&
* %"5# 4 - #j . 2 >/ 2k&c % 2 &9*8 #&; i sd ( 1(e 0 # "'&2h 4 ? &9*$ #; . 'ej /%/% l& s d g s d g ! ! " ! 1 10 100 1000 0.1 1 10 10 0 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 40s pulse width t = 25c c 1 10 100 1000 0.1 1 10 10 0 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 40s pulse width t = 175c c 1 10 100 1000 45678910 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) t = 175c v = -50v 40s pulse width ds j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -35a d #$ %" &' ( ! & ( % & % & % ) * & 0 1000 2000 3000 4000 5000 6000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 40 80 120 160 20 0 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) v = -80v v = -50v v = -20v ds ds ds for test circuit see figure 13 i = -21a d 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2. 4 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1000 1 10 100 100 0 operation in this area limited by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source voltage (v) ds d 10s 100s 1ms t = 25c t = 175c single pulse c j %*!& %*!& +," #$ -"", ! . /0 #$ 1 ! 0.1 % 4 4 &m&& + - v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) ( ! & 1( ! &+," #$ ',!- & q g q gs q gd v g charge 2 d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 3 . ,+," 3 . , t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 0 400 800 1200 1600 2000 25 50 75 100 125 150 17 5 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top -8.6a -15a bottom -21a d p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 4 ? -( % >/4 ? % >/ /$% ff ? &m&&- %m 4 % "/ ? " * / % % ? ) ? " "5# % % 8 2 4 4- / 8&m&8 . &' 56 444 &8 " # %"- ' -- % &'((( ) !7-8)- % data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/04 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14 .09 (.555) 13 .47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an ir f1010 lot code 1789 as s e mb le d on ww 19, 1997 part numbe r as s e mb l y lot code date code year 7 = 1997 line c week 19 logo rectifier int e rnat ional note: "p" in assembly line position indicates "lead-free" note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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